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ST13003-K
High voltage fast-switching NPN power transistor
General features

Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed
Applications
Electronic ballast for fluorescent lighting (CFL)
SOT-32
3
2
1
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications.
Internal schematic diagram
Order codes
Part Number ST13003-K Marking 13003 Package SOT-32 Packaging Bag
May 2007
Rev 1
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Electrical ratings
ST13003-K
1
Electrical ratings
Table 1.
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 0.75A, tp < 10s, T j < 150C) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25C Storage temperature Max. operating junction temperature Value 700 400 V(BR)EBO 1.5 3 0.75 1.5 40 -55 to 150 150 Unit V V V A A A A W C C
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Electrical characteristics
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 2.
Symbol ICEV V(BR)EBO
Electrical characteristics
Parameter Collector cut-off current (VBE =-1.5V) Emitter-Base breakdown voltage (IC = 0) Test Conditions VCE =700V VCE =700V IE =10mA Tj = 125C 9 Min. Typ. Max. 1 5 18 Unit mA mA V
Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain RESISTIVE LOAD tr ts tf Rise time Storage time Fall time INDUCTIVE LOAD ts Storage time
IC =10mA IC = 0.5A IC = 1A
L =25mH _ IB = 0.1A
400
V 0.5 1 3 1 1.2 V V V V V
_ _ IB = 0.25A IC = 1.5A _ _ IB = 0.5A IC = 0.5A IC = 1A IC =0.5A IC =1A VCC = 125V IB1 = 0.2A Tp = 25s IC = 1A VBE =-5V VClamp =300V IB1 = 0.2A L =50mH 0.8 _ IB = 0.1A _ _ IB = 0.25A V CE =2V V CE =2V IC = 1A IB2 = -0.2A 8 5
VBE(sat) (1) hFE
20 25
1 4 0.7
s s s
s
Note (1) Pulsed duration = 300 s, duty cycle 1.5%
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Electrical characteristics
ST13003-K
2.1
Electrical characteristics (curves)
Figure 1. Safe operating areas Figure 2. Derating curves
Figure 3.
Output characteristics
Figure 4.
Reverse biased safe operating areas
Figure 5.
DC current gain
Figure 6.
DC current gain
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ST13003-K Figure 7. Collector-emitter saturation voltage Figure 8.
Electrical characteristics Base-emitter saturation voltage
Figure 9.
Inductive load switching time Figure 10. Resistive load switching time
2.2
Test circuits
Figure 11. Resistive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor
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Electrical characteristics Figure 12. Inductive load switching test circuit
ST13003-K
1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier
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Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
ST13003-K
SOT-32 (TO-126) MECHANICAL DATA
DIM. A B B1 D E e e1 L P Q Q1 H2 I 1 2.15 1.27 mm. MIN. 2.4 0.64 0.39 10.5 7.4 2.04 4.07 15.3 2.9 3.8 1.52 2.29 4.58 TYP MAX. 2.9 0.88 0.63 11.05 7.8 2.54 5.08 16 3.2
0016114E
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Revision history
4
Revision history
Table 3.
Date 23-May-2007
Revision history
Revision 1 Initial release. Changes
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ST13003-K
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